Effects of scaling on the characteristics of CMOS analog circuits

نویسندگان

  • Krasimira Shtereva
  • Iliya Genchev
چکیده

Continued scaling of CMOS technology affects both, the parameters and the characteristics of MOSFET and the integrated circuit built on them and introduces some new problems in analog design. The reduction of the gate length and the gate oxide thickness led to improvements in terms of chip area, speed and power consumption. At the same time, nonlinear output conductance, reduced voltage gain and gate-leakage currents, set limits to analog circuits performance. In this paper are analyzed some characteristics of MOSFET (currents, I-V characteristics), considering different technology nodes. The impact of scaling below 0.1 μm on the characteristics of the analog circuit is evaluated by the device simulation of an operational transconductance amplifier (OTA) using LTspice simulation tool.

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تاریخ انتشار 2017